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Home > Inverse Metal Assisted Chemical Etching and its Applications for Optoelectronic Devices

MacEtch for Ge and β-Ga2O3

Inverse Metal Assisted Chemical Etching and its Applications for Optoelectronic Devices [1]

This metal-assisted chemical etching (MacEtch) technology can be used to fabricate structure and texture on Ge and β-Ga2O3Et. The optoelectronic devices made by this method show improvement in both optical and electrical properties.

  • Kim et al., "Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport," Adv. Funct. Mat., 2017

Xiuling
Li

Inventors:

US Pat #: 
10,741,705
Issue Date: 
8/11/2020
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