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Home > Novel Vertical Hetero-and Homo-Junction Tunnel Field-Effect Transistors Based on Multi-Laye 2D Crystals

Novel Vertical Hetero- and Homo- Junction Tunnel Field-Effect Transistors Based on Multi-Layer 2D Crystals

Novel Vertical Hetero-and Homo-Junction Tunnel Field-Effect Transistors Based on Multi-Laye 2D Crystals [1]

The invention is a vertical hetero- and homo- junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides. The novel multi-layer structure allows low power and bypassing of current limits by using BP as a channel. Compared to MS2, BP has smaller bandgap, allowing electrons to swim much more easily. In addition, using multi-layer structure allows smaller contact resistance.

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[1] https://origin.otm.illinois.edu/technologies/novel-vertical-hetero-and-homo-junction-tunnel-field-effect-transistors-based-multi